منابع مشابه
Characterization of Al2O3 Films grown by Electron Beam Evaporator on Si Substrates
We report the characterization of aluminum oxide (Al2O3) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1967
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.10.57